High-performance scalable organic photovoltaics with high thickness tolerance from 1 cm2 to above 50 cm2

•P(NDI2OD-T2) is introduced in PBDB-T-2F:N3 blend film to realize optimal morphology•The ternary BHJ shows a uniform morphology over large area•A active efficiently improves the CTM efficiency loss•The OPV module with an area of 58.5 cm2 rendered improved PCE 14.04% Organic photovoltaics (OPVs) have shown remarkably enhanced performance small cells; however, it highly important high-efficiency devices using large-area and thick films for successful industrial application. One critical issues development bulk heterojunction (BHJ) films, which reproducibly show high regardless their thickness. We demonstrate effective strategy reproduce composition second acceptor P(NDI2OD-T2) forms intricate channels PBDB-T-2F donor domains induces nanostructure uniformity both cases films. studied optoelectronic properties charge dynamics resulting film, corresponding notable 14.04%. Our work will provide promising guideline boosting area. To high-performance organic photovoltaic (OPV) printing technology, produce thickness tolerance. developed PBDB-T-2F:N3:P(NDI2OD-T2) where domain exciton dissociation, balanced transport, less recombination. Moreover, forming nanocrystallites polymer Consequently, patterned-blade-coating device showed 14.04%, compared 12.59% control device, among highest efficiencies reported OPVs areas above 50 cm2. Notably, prepared scribing method achieved 13.14% geometric fill factor 91.82% from 22.44 attracted intensive research interest past several decades because they are appropriate use flexible lightweight can be fabricated via roll-to-roll technologies at low cost.1Cheng P. Li G. Zhan X. Yang Y. Next-generation based on non-fullerene acceptors.Nat. Photon. 2018; 12: 131-142Crossref Scopus (1338) Google Scholar, 2Inganäs O. three decades.Adv. Mater. 30: e1800388Crossref (440) 3Park S. Kim T. Yoon Koh C.W. Woo H.Y. Son H.J. 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More importantly, demonstrated introduction advantageous regular nanostructures could successfully perform scaling up small-area (active area: 1 cm2) thick, As result, composed 10 connected series higher than (GFF) investigated mechanism transport correlating effect embedded thickness-dependent structures PBDB-T-2F, N3, Figure 1A, film-state spectra S1A. N3 clearly complementary each other, beneficial light spectrum. main peak located between those N3; does not induce substantial changes (Figure S1B). energy-level diagrams used fabricating OPVs, including presented 1B. lowest unoccupied orbital (LUMO) promote transfer N3. investigate surface material, measured contact angles liquid droplets distilled water diiodomethane (DIM) Photographs DIM displayed S2. calculated values were 33.9, 39.5, 30.5 mJ/m2 P(NDI2OD-T2), respectively. 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With increasing ratio, VOC slightly improved, likely greater offset occupied (HOMO) LUMO 1B).Table 1Photovoltaic PBDB-T-2F:N3:P(NDI2OD-T2)-based ratiosBlend (X)aPBDB-T-2F:N3:P(NDI2OD-T2) 1:1.2 − X:X w/w/w.VOC (V)JSC (mA/cm2)JSC,EQEbJSC,EQE short-circuit density (JSC) obtained EQE spectra. (mA/cm2)FF (%)PCEmax(PCEavgcThe average standard deviation PCEs individual devices.) (%)00.85524.3723.2269.1214.40 (13.90 ± 0.30)0.10.86925.2224.4871.2215.61 (14.80 0.58)0.20.87124.9123.8664.8514.07 (13.67 0.31)0.40.87620.9419.6758.9410.81 (10.42 0.38)a w/w/w.b JSC,EQE spectra.c Open table tab dependency incident intensity (Pin) VOC-Pin relationship S4A. slope plot recombination behavior OPVs. proportional nkBT/q, n constant, kB Boltzmann T temperature, q elementary charge. value implies bimolecular dominant trap-assisted (Shockley-Read-Hall recombination) occurs system competes process, closer 2.33Koster L.J.A. Mihailetchi V.D. Ramaker Blom P.W.M. Light dependence cells.Appl. Phys. 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(26.3 mA/cm2) (25.0 mA/cm2), consistent addition, larger Gmax 1.51 1028 m−3s−1 96.5%, (1.45 91.5%, respectively). processes aforementioned results, expect make favorable generation/dissociation. progressively same processing active-area size controlled changing length fixing width 2.5 mm one patterned stripe 3A, active-area-dependent excluding drop caused sheet resistance indium tin oxide (ITO). characteristic 3B S8A–S8C PCE, VOC, JSC, FF, area, 14.84% 0.3% 0.5 0.75 exhibit very 14.79% 0.26% 14.76% 0.34%, gradually 14.32% 0.24% 14.17% 0.27% 13.61% 0.4% devices, Such narrow mostly square cm, seen S9A S9B. S9C tabulated S9C, 12.75% (average 12.57% 0.32%) 14.51% 0.38%) PBDB-T-2F:N3-based OPV. layer 1:1.2:0 1:1.1:0.1 w/w/w S10A S10B 3C 3D Their 3. When 102–255 nm, decreased substantially 18.4% largest decrease parameters. contrary, optimum much thickness-tolerance and, thus, 291 14.12% cm2, 11.63% 3E; S3). Series shunt S11), 190–210 nm. me